Summary
The MBE (Molecular Beam Epitaxy) Engineer manufactures InP-laser structures with MBE system, records and tracks the data of InP-laser wafer growth. Responsible for routine maintenance and calibration of equipment, wafer growth and characterization, monitoring and interpreting characterization results to the multi-disciplinary team of device fabrication, manufacturing of structures, and ensure quality to control yields and performance. Depending on experience and education, a Senior Engineer position may be offered. The Senior Engineer candidate should demonstrate the capability to independently identify failure or improvement areas in the MBE process without detailed instructions from management.
Job Duties
Qualifications
Bachelor�s degree in Chemical, Electrical Engineering, Material Science, Physics, or related discipline is required, Master�s degree or PhD preferred.
To be considered for MBE Engineer position, a minimum 3-year experience in experiment design, process control, and improvement in semiconductor laboratory or fabrication is required
Hands-on experience in semiconductor characterization techniques, such as photoluminescence, X-ray diffraction, optical microscopy, etc. is preferred.
Knowledge of compound semiconductor device theory is desired
Experience operating MBE or MOCVD epitaxy growth systems is a plus
Robust analysis and problem-solving skills.
Comfortable to work under cleanroom hood and without any make-up.
Willing to work flexible hours upon production request which may include 2nd shift and night shift production work schedule.
Ability to lift and hold 20 lbs steady for 30 secs.
Location
This position will be on-site based in Sugar Land, Texas.
WHY AOI?
In addition to competitive salary, AOI offers
We do not accept unsolicited proposals from third-party recruiters or agencies. Contacting hiring managers directly may result in disqualification of submissions.